foreword hiroshi iwai introduction wladek grabinski, bart nauwelaers and dominique schreurs 1 2/3-d process and device simulation. an effective tool for better understanding of internal behavior of semiconductor structures daniel donoval, andrej vrbicky, ales chvala, and peter beno 2 psp: an advanced surface-potential-based mosfet model r. van langevelde, and g. gildenblat 3 ekv3.0: an advanced charge based mos transistor model. a design-oriented mos transistor compact model for next generation cmos matthias bucher, antonios bazigos, francois krummenacher,jean-micehl sallese, and christian enz 4 modelling using high-frequency measurements dominique schreurs 5 empirical fet models iltcho angelov 6 modeling the soi mosfet nonlinearities. an empirical approach b. parvais, a. siligaris 7 circuit level rf modeling and design nobuyuki itoh 8 on incorporating parasitic quantum effects in classical circuit simulations frank felgenhauer, maik begoin and wolfgang mathis 9 compact modeling of the mosfet in vhdl-ams christophe lallement, francois pecheux, alain vachoux and fabien pregaldiny 10 compact modeling in verilog-a boris troyanovsky, patrick o'halloran and marek mierzwinski index
鄂公網(wǎng)安備 42010302001612號(hào) 