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半導體物理電子學(第二版)

半導體物理電子學(第二版)

定 價:¥98.00

作 者: (美國)(Li、S.S)李
出版社: 科學出版社
叢編項: 國外物理名著系列
標 簽: 半導體物理學

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ISBN: 9787030209405 出版時間: 2008-02-01 包裝: 平裝
開本: 16 頁數(shù): 697 pages 字數(shù):  

內容簡介

  本書全面介紹了半導體物理的基本內容,這些內容是理解半導體的物理性質和光電器件制備原理的基礎。本書系統(tǒng)性強,合理地安排了物理原理,表征法以及半導體材料和器件的應用等內容,兼顧了物理學家、材料學家和設備工程師的需求。本書反映了半導體技術在過去十年的進步,包括許多新出現(xiàn)并已進入市場的半導體器件。本書適合于電子工程,材料科學,物理和化學工程的研究生,也可供半導體工業(yè)的過程工程師和設備工程師參考。

作者簡介

暫缺《半導體物理電子學(第二版)》作者簡介

圖書目錄

Preface
1.Classification of Solids and Crystal Structure
 1.1 Introduction
 1.2 The Bravais Lattice
 1.3 The Crystal Structure
 1.4 Miller Indices and Crystal Planes
 1.5 The Reciprocal Lattice and Brillouin Zone
 1.6 Types of Crystal Bindings
 1.7 Defects in a Crystalline Solid
  Problems
  Bibliography
2.Lattice Dynamics
 2.1 Introduction
 2.2 The One-Dimensional Linear Chain
 2.3 Dispersion Relation for a Three-Dimensional Lattice
 2.4 The Concept of Phonons
 2.5 The Density of States and Lattice Spectrum
 2.6 Lattice Specific Heat
  Problems
  References
  Bibliography
3.Semiconductor Statistics
 3.1 Introduction
 3.2 Maxwell-Boltzmann Statistics
 3.3 Fermi-Dirac Statistics
 3.4 Bose-Einstein Statistics
 3.5 Statistics for the Shallow-Impurity States in a Semiconductor
  Problems
  Bibliography
4.Energy Band Theory
 4.1 Introduction
 4.2 Basic Quantum Concepts and Wave Mechanics
 4.3 The Bloch-Floquet Theorem
 4.4 The Kronig-Penney Model
 4.5 The Nearly Free Electron Approximation
 4.6 The Tight-Binding Approximation
 4.7 Energy Band Structures for Some Semiconductors
 4.8 The Effective Mass Concept for Electrons and Holes
 4.9 Energy Band Structures and Density of States for Low-Dimensional Systems
  Problems
  References
  Bibliography
5.Equilibrium Properties of Semiconductors
 5.1 Introduction
 5.2 Densities of Electrons and Holes in a Semiconductor
 5.3 Intrinsic Semiconductors
 5.4 Extrinsic Semiconductors
 5.5 Ionization Energies of Shallow-and Deep-Level Impurities
 5.6 Hall Effect,Electrical Conductivity,and Hall Mobility
 5.7 Heavy Doping Effects in a Degenerate Semiconductor
  Problems
  References
  Bibliography
6.Excess Carrier Phenomenon in Semiconductors
 6.1 Introduction
 6.2 Nonradiative Recombination: The Shockley-Read-Hall Model
 6.3 Band-to-Band Radiative Recombination
 6.4 Band-to-Band Auger Recombination
 6.5 Basic Semiconductor Equations
 6.6 The Charge-Neutrality Equation
 6.7 The Haynes-Shockley Experiment
 6.8 The Photoconductivity Decay Experiment
 6.9 Surface States and Surface Recombination Velocity
 6.10 Deep-Level Transient Spectroscopy Technique
 6.11 Surface Photovoltage Technique
  Problems
  References
  Bibliography
7.Transport Properties of Semiconductors
8.Scattering Mechanisms and Carrier Moblities in Semiconductors
9.Optical Properties and Photoelectric Effects
10.Metal-Semiconductor Contacts
11.P-n Junction Diodes
12.Solar Cells and Photodetectors
13.Light-Emitting Devices
14.Bipolar Juction Transistors
15.Metal-Oxide-Semiconductor Field-Effect Transistors
16.High-Speed Ⅲ-Ⅴ Semiconductor Devices
Solutions to Selected Problems
Appendix
Index

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