晶體生長(zhǎng)手冊(cè)2：熔體法晶體生長(zhǎng)技術(shù)

　　《Springer手冊(cè)精選系列·晶體生長(zhǎng)手冊(cè)（第2冊(cè)）：熔體法晶體生長(zhǎng)技術(shù)（影印版）》介紹體材料晶體的熔體生長(zhǎng)，一種生長(zhǎng)大尺寸晶體的關(guān)鍵方法。這一部分闡述了直拉單晶工藝、泡生法、布里茲曼法、浮區(qū)熔融等工藝，以及這些方法的最新進(jìn)展，例如應(yīng)用磁場(chǎng)的晶體生長(zhǎng)、生長(zhǎng)軸的取向、增加底基和形狀控制。本部分涉及材料從硅和Ⅲ-V族化合物到氧化物和氟化物的廣泛內(nèi)容。

　　Govindhan Dhanaraj is the Manager of Crystal GrowthTechnologies at Advanced Renewable Energy Company （ARC Energy） atNashua， New Hampshire （USA） focusing on the growth of large sizesapphire crystals for LED lighting applications， characterizationand related crystal growth furnace development. He received his PhDfrom the Indian Institute of Science， Bangalore and his Master ofScience from Anna University （India）. Immediately after hisdoctoral degree， Dr. Dhanaraj joined a National Laboratory，presently known as Rajaramanna Center for Advanced Technology inIndia， where he established an advanced Crystal Growth Laboratoryfor the growth of optical and laser crystals. Prior to joining ARCEnergy， Dr. Dhanaraj served as a Research Professor at theDepartment of Materials Science and Engineering， Stony BrookUniversity， NY， and also held a position of Research AssistantProfessor at Hampton University， VA. During his 25 years of focusedexpertise in crystal growth research， he has developed optical，laser and semiconductor bulk crystals and SiC epitaxial films usingsolution， flux， Czochralski， Bridgeman， gel and vapor methods， andcharacterized them using x-ray topography， synchrotron topography，chemical etching and optical and atomic force microscopictechniques. He co-organized a symposium on Industrial CrystalGrowth under the 17th American Conference on Crystal Growth andEpitaxy in conjunction with the 14th US Biennial Workshop onOrganometallic Vapor Phase Epitaxy held at Lake Geneva， WIin 2009.Dr. Dhanaraj has delivered invited lectures and also served assession chairman in many crystal growth and materials sciencemeetings. He has published over 100 papers and his researcharticles have attracted over 250 rich citations.